I. Introduction of the Laboratory
State Key Laboratory of Radio Frequency Heterogeneous Integration (hereinafter referred to as the Laboratory) was approved by the relevant state ministries and commissions, and is led by Shenzhen University, with the participation of Shanghai Jiao Tong University and ZTE Corporation. Focusing on the key scientific and technological issues of Radio Frequency Heterogeneous Integration, the laboratory carries out systematic and in-depth original and forward-looking basic research and core technology research, understands the basic principles, masters the theoretical methodology and core technology, forms the Radio Frequency Heterogeneous Integration capabilities, platforms and standards, and develops a series of Radio Frequency Heterogeneous Integration circuits systems for the country's major needs. Laboratory research will promote the development of integrated circuits and information systems integration technology to achieve rapid progress from integrated circuits to integrated systems of change and leap.
Ⅱ. The research direction and content
RF chip and system design:
RF millimetre wave chip design. Silicon-based, compound semiconductor RF millimetre wave chip design, including phased array transceiver front-end, digital reconfigurable transceiver, functional single component, multifunctional front-end, and integrated passive components.
RF millimetre wave system design. RF millimetre wave integrated microsystem design, including LTCC-based, resin-based wafer-level fan-out, silicon-based three-dimensional integrated transceiver front-end packaging system (SiP) and active packaging antenna (AiP), monolithic RF millimetre-wave heterogeneous integrated circuits, core-based RF millimetre-wave integrated circuits and cross-scalar integrated RF microsystems, such as the design and development.
Ⅲ. Recruitment positions and requirements
Position Title: Pre-appointment-Long-term Faculty (Professor, Associate Professor, Assistant Professor)
Tenure Requirements:
Assistant professors are generally no older than 35 years old, associate professors are generally no older than 40 years old, and professors are generally no older than 45 years old;
Obtain a doctoral degree from a high-level university or research institution in or outside the country (territory), have strong scientific research ability, innovation consciousness, cooperation spirit and development potential, and be able to teach undergraduate courses;
Assistant professors have achieved good academic results and become prominent in relevant academic fields. Those who have reached the level of Associate Professor in high-level universities in China (or abroad) and achieved academic achievements recognised by peers in China (or abroad) and have considerable academic influence can directly apply for pre-appointment to the position of Associate Professor. Those who are particularly outstanding can directly apply for the pre-appointed professor or special professor post.
Have research background in microelectronics technology, RF integrated circuits and systems, electronic packaging and integration technology, electromagnetic field microwave technology or related disciplines. Experience in RF millimetre wave chip circuit design or RF millimetre wave chip-related development is preferred.
IV. Support conditions
Provide competitive salary (starting from 360,000 for assistant professors) and corresponding research start-up funds;
Talent policy: Excellent candidates can be employed by Shenzhen University's "Pengcheng Peacock Plan" special positions, or included in the university talent project training, enjoying 150,000-240,000 RMB/year job performance.
Settlement policy: You can apply for renting the school's swing space with preferential rent. Those who meet the conditions can enjoy the Shenzhen Talent Housing Policy, subject to the information released by the government.
Employee care: 11 member schools of SZU affiliated education group, from kindergarten to high school, effectively guarantee the schooling of children of teaching staff; 2 large-scale directly-affiliated general hospitals built according to the standard of Grade 3A are set up under the company, which provide high-quality medical services, including annual health checkups.
V. Materials to be provided by applicants
Detailed curriculum vitae: continuous study and work resume from the beginning of undergraduate to the date of application, catalogue of published papers and books, major teaching and research achievements, research projects undertaken, patents and awards.
Work vision and future research plan.
Please consolidate all the above materials into a single PDF document, and state your name + the position you are applying for in the title of the email. Send to the contact person's email address: sxue@szu.edu.cn
The recruiter will keep the confidentiality of the application materials submitted by the applicant.
Ⅵ. Application Procedures
Candidates will send the application materials to the designated e-mail address;
Candidates for interviews are identified after preliminary examination of the application materials;
Candidates are called for interviews;
School review and approval.
VII. Contact Information
Contact: Teacher Xue
E-mail address: sxue@szu.edu.cn
Counselling Tel: 0755-86936612
Summer Safety Notice for State Key Laboratory of Radio Frequency Heterogeneous Integration
Source: [SZU] Time: 2023-07-05 Views: 34
Dear Lab Members:
In order to ensure the smooth operation of the laboratory work and the safety of the members, we issue the following notice of summer safety instructions for State Key Laboratory of Radio Frequency Heterogeneous Integration (SHENZHEN UNIVERSITY), Please be sure to read it carefully and strictly abide by it:
I. Safety awareness and personal protection:
Laboratory safety is the primary consideration, please always maintain a high degree of safety awareness. When entering the laboratory, you must wear personal protective equipment, including lab coats, gloves, goggles and so on. Before performing experimental operations, make sure you understand the safety requirements and operating procedures of the relevant experiments.
Ⅱ. the correct use of instruments and equipment:
Before using any instrument and equipment, you must read the operation manual and related instructions in detail to ensure the correct use. During operation, follow the operating procedures and safety requirements of the instrument and equipment to ensure the normal operation of the equipment and personal safety.
III. Chemicals and Hazardous Substances:
When using chemicals and hazardous substances, the chemical management regulations of the laboratory must be strictly observed. Understand and master the characteristics, storage requirements and handling methods of chemicals to avoid accidents. Follow proper chemical handling procedures and protective measures, such as wearing gloves and operating under a chemical fume hood, during experiments.
IV. Emergency and Accident Reporting:
In case of an emergency or an experimental accident, immediately take appropriate emergency measures and promptly report to the laboratory supervisor. Familiarize yourself with the emergency evacuation routes and safety exits of the laboratory and remain calm in case of emergency.
V. Laboratory Hygiene and Tidiness:
Maintaining laboratory hygiene and tidiness is the responsibility of each of us. At the end of an experiment, clean and organize the work area and dispose of waste and experimental residues properly. Regularly clean laboratory equipment, instruments and work surfaces to maintain a good working environment.
VI. Laboratory regulations and training:
Familiarize yourself with and comply with laboratory regulations and safety procedures. Participate in relevant safety training and education activities to improve safety awareness and operation skills. All members are requested to strictly follow the above safety instructions for operation and management to ensure the safety of the laboratory and the health of each member. If you have any questions or safety issues, please consult the lab manager promptly. Thank you for your cooperation and support!
We wish you all a safe, productive and meaningful summer!
State Key Laboratory of Radio Frequency Heterogeneous Integration
July 1, 2023
Device and platform overview
State Key Laboratory of Radio Frequency Heterogeneous Integration (hereinafter referred to as the Laboratory) is led by Shenzhen University, and co-constructed by Shanghai Jiao Tong University and ZTE Corporation.
The main body of the laboratory is located in the Science and Technology Park Building on the Yuehai Campus of SZU, of which the ultra-clean experimental environment is about 2,000 square meters and the office area is about 10,000 square meters. The laboratory intends to purchase high-precision RF test systems, wafer bonding/unbonding systems, advanced packaging equipment, lithography systems, magnetron sputtering coating systems, chemical vapor deposition systems, atomic layer deposition systems, thin film heat treatment equipment, etching equipment, material/structure characterization equipment, etc., with a total value of equipment of about 300 million RMB.
State Key Laboratory of Radio Frequency Heterogeneous Integration (SZU) has put into use the following laboratories: Key Laboratory of Optoelectronic Devices and Systems of the Ministry of Education of China/Guangdong Province, Laboratory of Academician Mao Junfa's Team, and Optoelectronics Center. (1) The Key Laboratory of Optoelectronic Devices and Systems of the Ministry of Education/Guangdong Province has a total area of 8200 square meters, including 1,200 square meters of Class 100 and Class 10,000 purification laboratories; at the same time, it is equipped with a complete electronic-grade ultrapure water preparation system, a variety of special gases, such as delivery systems and other auxiliary facilities, with instrumentation and equipment valued at more than 200 million yuan; (2) the laboratory of Academician Mao Junfa's team is located in Canghai Campus on the 12th floor of the Zhi Zhen Building. With a floor area of 1520 square meters, the laboratory is constructing the international leading RF test conditions, which will form the complete capability of port test, on-chip test and air port test from material to chip, from device to system, and the main equipments include: 500 GHz network analyzer, 110 GHz signal generator and spectrometer, 256 GSa/s high sample rate oscilloscope, 500 GHz on-chip antenna measurement system, 110 GHz near- and far-field measurement system, and 100 GHz near- and far-field measurement system, which will be able to provide the best RF test conditions in the world. system, 110 GHz near and far field antenna test system and other advanced test equipment; (3) Optoelectronics Center is located in Shenzhen University Canghai Campus, Zhiteng Building, the negative floor, building area of 1,350 square meters, ultra-clean experimental environment of about 1,000 square meters. It has been equipped with large-scale equipment including Electron Beam Lithography System, high-resolution electron beam imaging exposure machine, Wide broad spectral light excitation tester, Multi-chamber Vacuum Coating System, Scanning Electron Microscope, DEKTAK XT Stylus Profiler, with a total value of equipment of about 60 million RMB.
Efforts will be made to build the laboratory into an internationally advanced research and talent training base in the field of RF heterogeneous integrated circuits, to lead the frontier of the discipline and original innovation in the related fields, and to promote the development of China's integrated circuits to change lanes and overtake.
High-Resolution Electron Beam Imaging Exposure Machine
Source: [SZU] Time: 2023-07-04 Views: 46
High-Resolution Electron Beam Imaging Exposure Machine
INSTRUMENT INTRODUCTION
Brand: Raith
Model: PIONEER Two
Manufacturer: Raith GmbH
Origin: Germany
Main specifications and technical parameters:
Schottky thermal field emission electron gun Electron beam energy: 20eV~30keV; Minimum spot size ≤1.6nm; Minimum line width ≤8nm; Stroke of table movement: 50 x 50 x 25 mm; Laser interference table positioning accuracy: 1nm; Suitable for samples 2 inches and below; Splicing/nesting accuracy ≤60nm [mean + 3σ]; Bruker QUANTAX 200 Energy Spectrometer
Main functions and features:
It is mainly used for the processing of micro and nano optoelectronic devices, secondary electron imaging measurements, and compositional analysis of materials. The main functions of the equipment are high-resolution electron beam exposure, high-resolution electron beam imaging measurement, and energy spectrum analysis
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
Electron Beam Lithography System
Source: [SZU] Time: 2023-07-04 Views: 25
INSTRUMENT INTRODUCTION
Brand: Raith
Model: EBPG5150
Manufacturer: Raith BV
Origin: Netherlands
Main Specifications and Technical Parameters:
Minimum beam spot is not greater than 1.9nm; Minimum step size is 0.1nm; Main field distortion is not greater than ±10nm @500um writing field; Minimum line width: ≤ 8nm @100kV; Splicing accuracy: 100um writing field, splicing accuracy is not greater than 12nm; 250um writing field, splicing accuracy is not greater than 15nm; 500um writing field, splicing accuracy is not greater than 20nm; Under 1000um writing field, the splicing accuracy is no more than 30nm; Sleeving accuracy: under 100um writing field, the sleeving accuracy is no more than 10nm; under 250um writing field, the sleeving accuracy is no more than 15nm; under 500um writing field, the sleeving accuracy is no more than 20nm; under 1000um writing field, the sleeving accuracy is no more than 30nm.
Main functions and features:
Functions: Fast exposure speed and high precision, can be used for exposure with large writing field and large beam current, suitable for use in scientific research and small batch production; High degree of automation, except for the release of samples to take samples, the whole exposure process only needs to edit the relevant parameters of exposure, and other processes can be completed automatically. Applications: in a variety of new devices such as nano-devices, single-electron devices, GaAs field effect devices, vacuum microelectronics devices, high-efficiency optoelectronics devices, superconducting quantum devices, surface acoustic wave devices, microwave devices, integrated optical waveguide micro-optical devices, flat panel displays, artificial intelligence sensing and directional devices will play a vital role in the production of the device
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
Multi-chamber Vacuum Coating System
Source: [SZU] Time: 2023-07-04 Views: 19
INSTRUMENT INTRODUCTION
Brand: Syskey
Model No.: ASN-EPI-C6
Manufacturer: AOpen Technology Inc.
Origin: Taiwan, China
Main Functions and Features:
The equipment consists of ultra-high vacuum electron beam evaporation process chamber, chemical vapor deposition process chamber, plasma etching process chamber, central transfer chamber, rapid sample feeding and sample turning chamber and control cabinet. The center is capable of depositing a variety of thin film materials, including metals, semiconductors, and various dielectric materials, as well as etching dielectric materials, and supports a maximum sample size of 6 inches. Currently the center supports the following ten plating materials: Au, Pd, Pt, Ag, Cu, Ti, Cr.
Placement Location:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
Wide broad spectral light excitation tester
Source: [SZU] Time: 2023-07-04 Views: 9
INSTRUMENT INTRODUCTION
Brand: MCPHERSON
Model: Model 234/302
Main specifications and technical parameters:
The equipment light source for the deuterium lamp, power greater than 150W, spectral range of 120-600nm, laser-driven plasma light source wavelength range of 170nm-2000nm, ARF excimer laser wavelength of 193nm, excitation monochromator in the range of 120-1100nm wavelength, the resolution is better than 0.2nm, the emission monochromator in the range of 200-1000nm, resolution is better than 0.2nm. The resolution is better than 0.2nm, dual light source optical path switching device, can realize the switching of standard detectors under the vacuum environment; Vacuum UV to visible variable angle reflectance spectrometry with scintillator PMT, the spectral range of 120nm-900nm, NIST or NIM traceable standard detectors, the spectral range of 120nm-1100nm, the emission spectrometer, the spectral separation of the dual grating Spectral range 170nm-1000nm; spectral resolution better than 0.2nm
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
Two photon polymerization 3D lithography machine
Source: [SZU] Time: 2023-07-05 Views: 34
INSTRUMENT INTRODUCTION
Brand: WOP
Model: ASN-EPI-C6
Manufacturer: UAB Altechna R&D
Place of origin: Lithuania
Main specifications and technical parameters:
Femtosecond laser source: 1. wavelength: 1028±5 nm 2. average power: ≥4W @ 1028 nm 3. repetition frequency: adjustable from 1 Hz to 200 kHz 4. pulse width: adjustable from 290 fs to 10 ps 5. max. pulse energy: >200 μJ 6. beam diameter: 3 ±1 mm 7. closed water cooling Dual-expansion module: 1. output wavelength: 514±3 nm 2. conversion efficiency: >50 % @514±3 nm 2. Conversion efficiency: >50 % @514 nm Precision positioning stage: 1. XYZ1+Z2 four-axis positioning stage (X-axis and Y-axis are air-bearing stages) 2. Stroke (XYZ1Z2): 200*100*5*50 mm 3. Positioning accuracy XY: ±400 nm 4. Positioning accuracy Z1: ±1.5 μm 5. Positioning accuracy Z2: ±2.5 μm 6. Repeatability XY: ±100 μm 6. Repeatability XY: ±100 nm 7. Resolution XY: 5 nm Spatial Light Modulator (SLM) 1. Matrix size: SXGA (1280 x 1024 pixels) 2. Operating wavelength: 510 ± 50 nm 3. Input bits: 256 (8 bits) levels 4. Effective area: 16 mm x 12.8 mm 5. Spatial resolution: ≤25 lp/mm 6. Optical conversion: ≤1000 lp/mm 6. Optical conversion: ≤2.5 nm lp/mm 6. Optical conversion efficiency: ≥98 % Focusing optics 1. Magnification/numerical aperture: 10x, 20x, 50x, 100x, 63x, of which 63x is an oil lens. 2. 2. Numerical aperture corresponds to: 0.28, 0.29, 0.42, 0.7, 1.4 3. Working distance corresponds to: 34, 31, 17, 6, 0.1 4. Resolution corresponds to: 4 μm, 2 μm, 1 μm, 0.5 μm, 0.3 μm
Main functions and features:
1. Microfabrication: micro-cutting, drilling, slotting, marking, etc. 2. Fabrication of surface micro-nano-structures 3. Fabrication of optical waveguides 4. Dual/multiple photon polymerization
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
Two photon three-dimensional lithography machine
Source: [SZU] Time: 2023-07-04 Views: 15
INSTRUMENT INTRODUCTION
Model: Nanoscribe Photonic Professional GT
Manufacturer: Nanoscribe, Germany
Origin: Lithuania
Main specifications and technical parameters:
Hardware Technical Parameters: 1) Wide selection of photosensitive materials, including SU-8, Ormocere, PEG-DA, AZ series, As2S3, IP-L 780, IP-G 780, etc.; 2) Minimum machinable range of 100 x 100 mm² for 2D planar surfaces; 3) Repeatability of writing operations with a repeatability error of <± 10 nm for 3D moving tables; 4) Minimum horizontal 3D linewidth <200 nm; 5) Minimum horizontal 2D linewidth <160 nm; 6) Optimum resolution of 3D structures in the vertical direction, with a minimum grid size of less than 1000 nm; 7) Optimum resolution of 2D structures in the horizontal direction, with a maximum resolution of less than 500 nm; 8) Maximum writing speed in scanning galvanometer mode of more than 10 mm/sec; *9) Real-time monitoring and control of the laser writing process; 10) Maximum writing speed of more than 10 mm/sec. in scanning galvanometer mode; *10) Maximum writing speed of more than 10 mm/sec. in laser writing mode. Real-time monitoring of the laser writing process; 10) Laser pulse width of 120 fs, frequency of 80MHz ± 1MHz.
Software Capabilities: a) For the workpiece stage that can load multiple samples at the same time, the device must have the ability to automatically switch from one sample position to another; b) Automatically switch between different microscope lenses; *c) The device must have the ability to automatically detect the interface between the photoresist and the substrate. If the difference in refractive index between the photoresist and substrate interface is large (e.g., IP-L 780 and glass substrate), the interface can be found with an accuracy of ±150 nm under the condition of using a high numerical aperture objective lens; d) the ability to automatically detect the tilt of the substrate and accordingly compensate for the coordinate transformation to maintain the designed device is not distorted; e) the equipment needs to have a secondary calibration function. If the workpiece needs to go through two different processing steps, then the equipment needs to be able to accurately adjust the position of the second step of sample processing based on the first step of processing; f) The equipment must be able to automatically adjust the speed of movement, especially in the turn, in order to maintain the sample processing speed at the same time to achieve a high degree of fidelity; g) According to the movement of the workpiece table real-time modulation of the laser energy to maintain a constant linewidth; h) The equipment must be able to automatically detect and compensate for the tilt of the substrate to maintain the design of the device without distortion h) Remote control: the calculator has a remote control function so that the system supplier can provide real-time assistance and application support via the Internet; i) Import of 3D models: compatible with the STL graphic file format; j) If the STL file format is used, it is necessary to highly compensate the exposure during the automatic conversion of the STL file into the native executable file of the device, in order to overcome the dispersion of the laser light caused by the chromatic aberration of the laser. to overcome the loss of laser energy due to chromatic dispersion; k) the device is able to overcome the instability of the focused spot along the Z-axis caused by spherical aberration to achieve highly directional uniformity of the workpiece; l) large solid structures can be processed by exposing only the shell layer, which greatly reduces the processing time
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
Deep Level Transient Spectroscopy
Source: [SZU] Time: 2023-07-04 Views: 9
INSTRUMENT INTRODUCTION
Brand: Phystech
Model: FT1030
Main specifications and technical parameters:
Voltage range: +/-20V, voltage resolution: +/-0.3V; Expanded voltage range: +/-100V, voltage resolution: +/-1.5V; Maximum pulse width is greater than 1000s, capacitance measurement of HF signals covering 1MHz, capacitance compensation covers 1pF-3300Pff; HF signals include 15mV, 30mV, 50mV, 100mV; capacitance test range covers 2pF, 20pF, 200pF, 2000pF; capacitance test range covers 2pF, 20pF, 200pF, 2000pF. Capacitance test range covers 2pF, 20pF, 200pF, 2000pF (manual or automatic); Capacitance test sensitivity up to 0.01fF.
Main functions and features:
1. interfacial state energy distribution; 2. interfacial state energy level and in vivo deep energy level; 3. captured interface and energy and temperature relationship
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
UV Mask Aligner
Source: [SZU] Time: 2023-07-05 Views: 34
INSTRUMENT INTRODUCTION
Model No.: MA605080104
Manufacturer: Munich
Main specifications and technical parameters:
Lamp power: 350W Wavelength: Maximum size of mask plate: 7 inch, corresponding to substrate one inch smaller (6 inch), Exposure type: proximity Exposure accuracy equal to or better than 2.5 μm; soft-contact exposure 2 μm; hard-contact exposure 1 μm; Registration accuracy of alignment marks (crosses) is ± 0.5 μm typical.
Main functions and features:
Function: After aligning the substrate and the mask plate, the substrate coated with UV photoresist on the surface is exposed, and the graphic on the mask plate is formed on the photoresist of the substrate after development; proximity, soft-contact, and hard-contact exposure modes can be used; exposure can be performed on positive or negative photoresists, and the minimum size of the exposed graphic can be up to 1 μm Micrometer application: used for the preparation of micrometer-sized electronic devices, MEMS systems, biological medical chips, etc.
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
Optical Microscopy-NIKON ECLIPSE LV150N
Source: [SZU] Time: 2023-07-04 Views: 11
INSTRUMENT INTRODUCTION
Brand: Nikon
Model: LV150N
Main Specifications and Technical Parameters:
Maximum sample height: 38MM (when used with LVNUSA USA nosepiece and LV-S32 3X2 stage/LV-S64 6X4 stage); 12V50W internal power supply for dimmer, coarse and fine adjustment knobs; Maximum sample size: 150 x 150mm
Main functions and features:
Meets a variety of needs for observation, research and analysis in a wide range of industries.
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
ALPHA PLASMA
Source: [SZU] Time: 2023-07-05 Views: 9
INSTRUMENT INTRODUCTION
Model No.: Q23504400618
Manufacturer: Alpha Plasma
Main specifications and technical parameters:
1. Chamber material and size: quartz, 12 liters, 240mm diameter, 260mm depth 2. Sample size processed: up to one 8" sample 3. Vacuum pump: BOC Edwards XDS35i dry pump, pumping speed 35 m3/h 4. Process gases: two ways: oxygen, argon, MKS mass flow controller to control gas flow, flow control upper limit of 500 and 200 sccm; gas input chamber with homogeneous design to ensure the uniformity of the plasma 5. microwave source: power 100-600W, 2.45GHz, auto-coupling 6. Software fully automated control: 10.4" display, touch-screen operation; The Windows® based touch screen interface provides fully automated control with a graphical user interface designed to be easy to use and learn; USB interface, convenient data retrieval; remote control, compatible with window office User password protection settings Process data can be stored, process parameters can be output Real-time monitoring of the process and data in the form of charting Automatic or manual operation can be realized. 7. the equipment requires a small footprint, not more than: 620x500x550mm (WxHxD)
Main functions and features:
In the pre-process of micro-nanofabrication, the photoresist is just the medium of graphic transformation, when the micro-nanograms are formed on the photoresist after photolithography, it is necessary to carry out the next step of the process of growth or etching, and after that it is necessary to remove the photoresist by some method. Microwave plasma debonder can realize this function. It generates a plasma by microwave and at the same time passes in oxygen, which reacts with the photoresist in an oxidizing reaction, forming a gas that is pumped away by a mechanical pump.
Placement:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
DEKTAK XT Stylus Profiler
INSTRUMENT INTRODUCTION
Model: DEKTAK XT Manual Table
Manufacturer: Bruker
Origin: Malaysia
Main specifications and technical parameters:
Scanning length: 50um-55mm, Measurement of the maximum drop (film thickness): 1mm, Taking point frequency table: 300 points per second, Probe force range: 1mg-15mg Maximum number of points: 120,000 (scanning time of 400s), The shortest point interval: 0.003um (scanning time and scanning length of the value of the same), Repeatability: Repeatedly measured 30 times the standard block, the statistical results of std value less than 4A.
Main functions and features:
Scanning to get the sample surface contour line, through the analysis can get the contour line on the different areas of the height of the fall (film thickness), roughness, stress, etc.
Placement Location:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
Scanning Electron Microscope
INSTRUMENT INTRODUCTION
Brand: Phenom
Model No.: Phenom Pure+
Main specifications and technical parameters:
Magnification: Optical 20x; Electronic 65,000x (non-digital); Resolution: < 25 nm (BSD); Accelerating voltage: 5 kV - 10 kV continuously adjustable; Filament material: Long-life CeB6 filament; Evacuation time: < 15 s; Image format: JPEG, TIFF, BMP; Image resolution options: 456 x 456, 684 x 684, 1024 x 1024 and 2048 x 2048 pixels. 684, 1024 x 1024 and 2048 x 2048 pixels.
Main functions and features:
1, Full shape mode, 3D shape mode. 2, Optical navigation mode, electronic navigation mode. 3, Vacuum blocking technology in the electronic chamber with short waiting time.
Placement Location:
Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor
PSG Analog Signal Generator (110 GHz)
INSTRUMENT INTRODUCTION
Brand: Keysight
Model: E8257D
Manufacturer: Keysight
Origin: USA
Key Specifications and Technical Data:
Metrology-grade frequency and level accuracy and excellent distortion and spurious characteristics to meet very demanding test requirements
Measures over a wide frequency range: available in 13, 20, 31.8, 40, 50, and 67 GHz models (expandable to 1.1 THz with a frequency spreader); optionally generates up to 1 W of output power (+30 dBm), enabling testing of high-power devices and compensating for power loss in the test system; achieves very low phase noise: -91 dBc/Hz ( 100 Hz frequency deviation), -126 dBc/Hz (10 kHz frequency deviation) (10 GHz) for Doppler radar, ADC, and receiver blocking tests; AM, FM, PM, and pulse modulation can be added to the signal to characterize devices and circuits.
Key Features and Functions:
Metrology-grade analog signal generator with excellent output power, level accuracy, and phase noise performance covering the 100 kHz to 67 GHz (scalable to 500 GHz) frequency range for testing advanced RF and microwave radars.
Placement:
Room 1205, Zhizhen Building, Shenzhen University South Campus, State Key Laboratory of Radio Frequency Heterogeneous Integration
Pulse Function Arbitrary Noise Generator
INSTRUMENT INTRODUCTION
Brand: Keysight
Model: 81160A
Manufacturer: Keysight
Origin: USA
Key Specifications and Technical Data:
Generates 330 MHz pulses and 500 MHz function/arbitrary waveforms at 2.5 GSa/s sampling rate and 14-bit vertical resolution; Selectable crest factor for Gaussian white noise lets engineers determine how much distortion to apply to the device during stress testing to meet the requirements of various serial bus standards; Hairless timing parameter change feature lets engineers change the frequency without dropping the line or hairs. Frequency can be changed without dropping the line or burr, and continuous operation can be achieved without having to reboot or reset the device under test; The arbitrary Bit Pattern feature shows the capacitive loading of a channel using a simple pattern setting. Designs can be stress-tested without the need for complex measurement setups. 330 MHz Pulse, 500 MHz Sine, 660 Mbit Patterns
Key Features and Functions:
The Keysight 81160A Pulse Function Arbitrary Noise Generator is a high-precision pulse generator with a wealth of signal generation, modulation, and distortion features to perform thorough stress testing of your devices!
Placement:
Room 1205, Zhizhen Building, Shenzhen University South Campus, State Key Laboratory of Radio Frequency Heterogeneous Integration
