INSTRUMENT INTRODUCTION

Brand: Raith

Model: EBPG5150

Manufacturer: Raith BV

Origin: Netherlands

Main Specifications and Technical Parameters:

Minimum beam spot is not greater than 1.9nm; Minimum step size is 0.1nm; Main field distortion is not greater than ±10nm @500um writing field; Minimum line width: ≤ 8nm @100kV; Splicing accuracy: 100um writing field, splicing accuracy is not greater than 12nm; 250um writing field, splicing accuracy is not greater than 15nm; 500um writing field, splicing accuracy is not greater than 20nm; Under 1000um writing field, the splicing accuracy is no more than 30nm; Sleeving accuracy: under 100um writing field, the sleeving accuracy is no more than 10nm; under 250um writing field, the sleeving accuracy is no more than 15nm; under 500um writing field, the sleeving accuracy is no more than 20nm; under 1000um writing field, the sleeving accuracy is no more than 30nm.

Main functions and features:

Functions: Fast exposure speed and high precision, can be used for exposure with large writing field and large beam current, suitable for use in scientific research and small batch production; High degree of automation, except for the release of samples to take samples, the whole exposure process only needs to edit the relevant parameters of exposure, and other processes can be completed automatically. Applications: in a variety of new devices such as nano-devices, single-electron devices, GaAs field effect devices, vacuum microelectronics devices, high-efficiency optoelectronics devices, superconducting quantum devices, surface acoustic wave devices, microwave devices, integrated optical waveguide micro-optical devices, flat panel displays, artificial intelligence sensing and directional devices will play a vital role in the production of the device

Placement:

Optoelectronics Center, Shenzhen University, South Campus of SZU, the first phase of the Basic Experiment Building, negative 1 floor